sot-89-3l 1. base 2. collector 3. emitter features z low current z high voltage applications z general purpose switching and amplification marking:bct39:at1 bct40:at2 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit BST39 400 collector-base breakdown voltage v (br)cbo i c =100a,i e =0 bst40 300 v BST39 350 collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 bst40 250 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =300v,i e =0 20 na emitter cut-off current i ebo v eb =5v,i c =0 100 na dc current gain h fe v ce =10v, i c =20ma 40 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =4ma 0.5 v transition frequency f t v ce =10v,i c =10ma, f=100mhz 70 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 2 pf symbol parameter value unit BST39 400 v cbo collector-base voltage bst40 300 v BST39 350 v ceo collector-emitter voltage bst40 250 v v ebo emitter-base voltage 5 v i c collector current 100 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 BST39,bst40 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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